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Nanosheet FET

A type of field-effect transistor that uses wider and thicker wires than a lateral nanowire.
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Description

A nanosheet FET has been proposed by IBM Research as one of the successor technologies to the finFET.

Similar to lateral nanowire FETs, nanosheet FETs use wider and thicker wires to provide improved electrostatics and drive current. Nanosheet FETs are still in R&D, but along with gate-all-around FETs they are one of the contending technologies for transistors at single-digit nanometer process nodes.


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