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Transistor model


SPICE requires models for the components. In order to propagate and standardize these models in commercial applications, the Department of Electrical Engineering and Computer Science at UC Berkeley created a group to develop these models.

In 1983, BSIM3 was added by Dr. Chenmin Hu. BSIM3 is a physics-based, accurate, scalable, robust and predictive MOSFET SPICE model for circuit simulation and CMOS technology development.

While the models are developed within UC Berkeley, commercial support for them rests with CMC.

Feb 19th 2015 - The Silicon Integration Initiative’s (Si2) Compact Model Coalition (CMC) announced the addition of two new SPICE model standards for Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs. The two new FDSOI compact models are called BSIM Independent Multi-Gate (BSIM-IMG) and HiSIM Silicon-On-Thin-Buried-oxide (HiSIM-SOTB) models.

BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology) (International Series on Advances in Solid State Electronics)

MOSFET Modeling & BSIM3 User's Guide

MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4

  • Other names: Berkeley Short-channel IGFET Model
  • Type: Semiconductor



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