EUV lithography is a soft X-ray technology.
Extreme ultraviolet (EUV) lithography is a soft X-ray technology, which has a wavelength of 13.5nm. Today’s EUV scanners enable resolutions down to 22nm half-pitch. In a system, an EUV light source makes use of a high power laser to create a plasma. This, in turn, helps emit a short wavelength light inside a vacuum chamber. In the chamber, the system uses several multilayer mirrors, which act to reflect light via interlayer interference.
EUV was originally slated to be introduced at the 45/40nm process node, but problems with the power source to achieve sufficient throughput have forced multiple delays. It was considered a critical component at 16/14nm as a way of avoiding double patterning using 193nm immersion. It currently will likely miss 10nm, as well, with the insertion point now slated for 7nm—at which point even EUV will require double patterning.