CDSAXS Milestones And Future Growth of X-ray-Based Metrology for 3D Nanostructures Important To Chip Industry


A new technical paper titled "Review of the key milestones in the development of critical dimension small angle x-ray scattering at National Institute of Standards and Technology." Abstract: "An x-ray scattering based metrology was conceived over 20 years ago as part of a collaboration between National Institute of Standards and Technology (NIST) and International Business Machines Corporat... » read more

Tech Forecast: Fab Processes To Watch Through 2040


The massive proliferation of semiconductors in more markets, and more applications within those markets, is expected to propel the industry to more than $1 trillion by 2030. But over the next 17 years, semiconductors will reach well beyond the numbers, changing the way people work, how they communicate, and how they measure and monitor their health and well-being. Chips will be the enabling ... » read more

Metrology Strategies For 2nm Processes


Metrology and wafer inspection processes are changing to keep up with evolving and new device applications. While fab floors still have plenty of OCD tools, ellipsometers, and CD-SEMs, new systems are taking on the increasingly 3D nature of structures and the new materials they incorporate. For instance, processes like hybrid bonding, 3D NAND flash devices, and nanosheet FETs are pushing the bo... » read more

Process Innovations Enabling Next-Gen SoCs and Memories


Achieving improvements in performance in advanced SoCs and packages — those used in mobile applications, data centers, and AI — will require complex and potentially costly changes in architectures, materials, and core manufacturing processes. Among the options under consideration are new compute architectures, different materials, including thinner barrier layers and those with higher th... » read more

Devices And Transistors For The Next 75 Years


The 75th anniversary of the invention of the transistor sparked a lively panel discussion at IEDM, spurring debate about the future of CMOS, the role of III-V and 2D materials in future transistors, and what will be the next great memory architecture.[1] Industry veterans from the memory, logic, and research communities see high-NA EUV production, NAND flash with 1,000 layers, and hybrid bon... » read more

Metrology Options Increase As Device Needs Shift


Semiconductor fabs are taking an ‘all hands on deck’ approach to solving tough metrology and yield management challenges, combining tools, processes, and other technologies as the chip industry transitions to nanosheet transistors on the front end and heterogenous integration on the back end. Optical and e-beam tools are being extended, while X-ray inspection is being added on a case-by-... » read more

Making Chips Yield Faster At Leading-Edge Nodes


Simulation for semiconductor manufacturing is heating up, particularly at the most advanced nodes where data needs to be analyzed in the context of factors such as variation and defectivity rates. Semiconductor Engineering sat down with David Fried, corporate vice president of computational products at Lam Research, to talk about what's behind Lam's recent acquisition of Esgee Technologies, ... » read more

Wafer Cleaning Becomes Key Challenge In Manufacturing 3D Structures


Wafer cleaning, once a rather mundane task as simple as dipping wafers in cleaning fluid, is emerging as one of the top major engineering challenges for manufacturing GAA FETs and 3D-ICs. With these new 3D structures — some on the horizon but some already in high-volume manufacturing — semiconductor wafer equipment and materials suppliers in the wet cleaning business are at the epicenter... » read more

3D NAND: Scenarios For Scaling & Stacking


A new research paper titled "Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages" was published by researchers at Sungkyunkwan University and Korea University. Abstract "Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some pote... » read more

Is There A Limit To The Number of Layers In 3D-NAND?


Memory vendors are racing to add more layers to 3D NAND, a competitive market driven by the explosion in data and the need for higher-capacity solid state drives and faster access time. Micron already is filling orders for 232-layer NAND, and not to be outdone, SK Hynix announced that it will begin volume manufacturing 238-layer 512Gb triple level cell (TLC) 4D NAND in the first half of next... » read more

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