Mix-And-Match Power Options

By Ann Steffora Mutschler Choices abound today when it comes to considering a node shrink. Fully depleted silicon on insulator (FD-SOI) and finFET technologies along with other advanced transistor options are being evaluated, both together and independently of the other. It is possible to implement finFET on bulk 28nm CMOS or finFET on an FD-SOI process, for example. It is also possible ... » read more