tag: AF-MERAM

Power/Performance Bits: Jan. 10

By Jesse Allen - 10 Jan, 2017 - Comments: 0

Antiferromagnetic magnetoelectric RAM Researchers at Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Swiss Nanoscience Institute, and the University of Basel developed a concept for a new, low power memory chip. In particular, the group focused on finding an alternative to MRAM using magnetoelectric antiferromagnets, which are activated by an electrical voltage rather than by a current. "... » read more

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