Big Changes In Patterning


Aki Fujimura, CEO of [getentity id="22864" comment="D2S"], sat down with Semiconductor Engineering to discuss patterning issues at 10nm and below, including mask alignment, the need for GPU acceleration, EUV's future impact on the total number of masks, and what the re-introduction of curvilinear shapes will mean for design. SE: Patterning issues are getting a lot of attention at 10nm and 7n... » read more

Battling Fab Cycle Times


The shift from planar devices to finFETs enables chipmakers to scale their processes and devices from 16nm/14nm and beyond, but the industry faces several challenges at each node. Cost and technical issues are the obvious challenges. In addition, cycle time—a key but less publicized part of the chip-scaling equation—also is increasing at every turn, creating more angst for chipmakers and... » read more

BEOL Issues At 10nm And 7nm


Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

Etching Technology Advances


Let’s get really, really small. That directive from leading semiconductor companies and their customers is forcing the whole semiconductor supply chain to come up with new ways to design and manufacture ever-shrinking dimensions for chips. The current push is to 10nm and 7nm, but R&D into 5nm and 3nm is already underway. To put this in perspective, there are roughly two silicon atom... » read more

Inside Advanced Patterning


Prabu Raja, group vice president and general manager for the Patterning and Packaging Group at [getentity id="22817" e_name="Applied Materials"], sat down with Semiconductor Engineering to discuss the trends in patterning, selective processes and other topics. Raja is also a fellow at Applied Materials. What follows are excerpts of that conversion. SE: From your standpoint, what are the big... » read more

What Transistors Will Look Like At 5nm


Chipmakers are currently ramping up 16nm/14nm finFET processes, with 10nm and 7nm just around the corner. The industry also is working on 5nm. TSMC hopes to deliver a 5nm process by 2020. GlobalFoundries, Intel and Samsung are doing R&D for that node. But 5nm technology presents a multitude of unknowns and challenges. For one thing, the exact timing and specs of 5nm remain cloudy. The... » read more

The Week In Review: Manufacturing


Chipmakers At this week’s Flash Memory Summit, Samsung rolled out several new products, including its next-generation 3D NAND device and a solid-state drive (SSD) with capacities up to 32 terabytes. At the same time, Samsung introduced a new and high-performance SSD solution, dubbed the Z-SSD. Samsung’s Z-SSD shares the fundamental structure of V-NAND and has a unique circuit design and... » read more

Next Challenge: Contact Resistance


In chip scaling, there is no shortage of challenges. Scaling the finFET transistor and the interconnects are the biggest challenges for current and future devices. But now, there is another part of the device that’s becoming an issue—the contact. Typically, the contact doesn’t get that much attention, but the industry is beginning to worry about the resistance in the contacts, or conta... » read more

Many Paths To Hafnium Oxide


Equipment and materials suppliers often talk about the fragmentation of integrated circuit processing. While the number of manufacturers has gone down, the diversity of the underlying semiconductor market has increased. Low-power processors for mobile devices, non-volatile memory for solid state disks, and dedicated graphics processors all have different requirements from the traditional ind... » read more

Managing ALD Effluent


Process designers tend to not think very much about the waste gases from their processes. The chamber exhaust sends the effluent gases to the fab scrubbers, and that is pretty much that. Except when it’s not. It turns out that the design of the ALD process can make life significantly more challenging for the chamber exhaust pumps. In atomic layer deposition, the first precursor gas, su... » read more

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