Patterning Problems Pile Up


Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more

Big Changes In Patterning


Aki Fujimura, CEO of [getentity id="22864" comment="D2S"], sat down with Semiconductor Engineering to discuss patterning issues at 10nm and below, including mask alignment, the need for GPU acceleration, EUV's future impact on the total number of masks, and what the re-introduction of curvilinear shapes will mean for design. SE: Patterning issues are getting a lot of attention at 10nm and 7n... » read more

Managing Parasitics For Transistor Performance


The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for most of the IC industry's history, these have been sufficient. “Parasitic” or “external” resistances and capacitances from structures outside the transistor have been small enough to discoun... » read more

Etching Technology Advances


Let’s get really, really small. That directive from leading semiconductor companies and their customers is forcing the whole semiconductor supply chain to come up with new ways to design and manufacture ever-shrinking dimensions for chips. The current push is to 10nm and 7nm, but R&D into 5nm and 3nm is already underway. To put this in perspective, there are roughly two silicon atom... » read more

Inside Advanced Patterning


Prabu Raja, group vice president and general manager for the Patterning and Packaging Group at [getentity id="22817" e_name="Applied Materials"], sat down with Semiconductor Engineering to discuss the trends in patterning, selective processes and other topics. Raja is also a fellow at Applied Materials. What follows are excerpts of that conversion. SE: From your standpoint, what are the big... » read more

The Week In Review: Manufacturing


Chipmakers GlobalFoundries has rolled out its next-generation FD-SOI technology. The new 12nm FD-SOI process is called 12FDX. It is designed for a range of applications, from mobile computing and 5G connectivity to artificial intelligence and autonomous vehicles. "Some applications require the unsurpassed performance of finFET transistors, but the vast majority of connected devices need high l... » read more

What Transistors Will Look Like At 5nm


Chipmakers are currently ramping up 16nm/14nm finFET processes, with 10nm and 7nm just around the corner. The industry also is working on 5nm. TSMC hopes to deliver a 5nm process by 2020. GlobalFoundries, Intel and Samsung are doing R&D for that node. But 5nm technology presents a multitude of unknowns and challenges. For one thing, the exact timing and specs of 5nm remain cloudy. The... » read more

Atomic Layer Etch Heats Up


The atomic layer etch (ALE) market is starting to heat up as chipmakers push to 10nm and beyond. ALE is a promising next-generation etch technology that has been in R&D for the last several years, but until now there has been little or no need to use it. Unlike conventional etch tools, which remove materials on a continuous basis, ALE promises to selectively and precisely remove targete... » read more

Overview Of Atomic Layer Etching In The Semiconductor Industry


Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-sca... » read more

Fab Issues At 7nm And 5nm


The race toward the 7nm logic node officially kicked off in July, when IBM Research, GlobalFoundries and Samsung jointly rolled out what the companies claim are the industry’s first 7nm test chips with functional transistors. They're not alone, of course. Intel and TSMC also are racing separately to develop 7nm technology. And in the R&D labs, chipmakers also are working on technologies f... » read more

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