Reducing Post-Placement Leakage With Stress-Enhanced Fill Cells

By Valeriy Sukharev, Jun-Ho Choy, Armen Kteyan and Henrik Hovsepyan As downward scaling of transistors continues, optimizing power consumption for mobile devices is a major concern. Power consumption consists of two components: dynamic and static. Dynamic (active) power is used while the chip is performing various functions, while static (leakage) power is consumed by leakage current (Figure... » read more