Managing Parasitics For Transistor Performance


The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for most of the IC industry's history, these have been sufficient. “Parasitic” or “external” resistances and capacitances from structures outside the transistor have been small enough to discoun... » read more

Changing Direction In Chip Design


Andrzej Strojwas, chief technologist at PDF Solutions and professor of electrical and computer engineering at Carnegie Mellon University—and the winner of this year's Phil Kaufman Award for distinguished contributions to EDA—sat down with Semiconductor Engineering to talk about device scaling, why the semiconductor industry will begin to fragment around new architectures and packaging, and ... » read more

Transferring Skills Getting Harder


Rising complexity in developing chips at advanced nodes, and an almost perpetual barrage of new engineering challenges at each new node, are making it more difficult for everyone involved to maintain consistent skill levels across a growing number of interrelated technologies. The result is that engineers are being forced to specialize, but when they work with other engineers with different ... » read more

Inside Advanced Patterning


Prabu Raja, group vice president and general manager for the Patterning and Packaging Group at [getentity id="22817" e_name="Applied Materials"], sat down with Semiconductor Engineering to discuss the trends in patterning, selective processes and other topics. Raja is also a fellow at Applied Materials. What follows are excerpts of that conversion. SE: From your standpoint, what are the big... » read more

Trade War Looms Over Materials


It’s time to pay close attention to rare earths and raw materials--again. In fact, the supply chain teams and commodity buyers at aerospace, automotive and electronics companies may have some new and potentially big problems on their hands. For some time, the European Union (EU), the United States and other nations have been at odds with China over rare earths. China, which accounts for... » read more

Interconnect Challenges Rising


Chipmakers are ramping up their 14nm finFET processes, with 10nm and 7nm slated to ship possibly later this year or next. At 10nm and beyond, IC vendors are determined to scale the two main parts of the [getkc id="185" kc_name="finFET"] structure—the transistor and interconnects. Generally, transistor scaling will remain challenging at advanced nodes. And on top of that, the interconnects ... » read more

Next Challenge: Contact Resistance


In chip scaling, there is no shortage of challenges. Scaling the finFET transistor and the interconnects are the biggest challenges for current and future devices. But now, there is another part of the device that’s becoming an issue—the contact. Typically, the contact doesn’t get that much attention, but the industry is beginning to worry about the resistance in the contacts, or conta... » read more

Interconnect Challenges Grow


It’s becoming apparent that traditional chip scaling is slowing down. The 16nm/14nm logic node took longer than expected to unfold. And the 10nm node and beyond could suffer the same fate. So what’s the main cause? It’s hard to pinpoint the problem, although many blame the issues on lithography. But what could eventually hold up the scaling train, and undo Moore’s Law, is arguably t... » read more

Recharging The Battery


There are few technologies in today’s cutting-edge technological environment that have a difficult time finding new levels of performance. Battery technology is one of them. With the exception of a few experimental offerings, batteries and their performance metrics are relatively flat. There has been some progress, of course. But when compared to other technologies such as transistors, mem... » read more

Pathfinding Beyond 10nm


After higher aspect-ratio finFETs and higher mobility SiGe and III-V materials, the industry will move to lateral nanowires and then to vertical nanowire transistors, and to new tunnel junction FETs or spin wave architectures ─ or to various combinations of these technologies for different applications, reported An Steegan, Imec senior vice president of process technology, during SEMICON West... » read more

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