Power/Performance Bits: Aug. 18

Reducing crosstalk with tantalum oxide memories Scientists at Rice University created a solid-state memory technology that allows for high-density storage with a minimum incidence of crosstalk errors. The memories are based on tantalum oxide. Applying voltage to a 250-nanometer-thick sandwich of graphene, tantalum, nanoporous tantalum oxide and platinum creates addressable bits where the ... » read more