Room-Temperature Metal Bonding Technology That Facilitates The Fabrication of 3D-ICs & 3D Integration With Heterogeneous Devices


A technical paper titled "Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED" was published by researchers at Tohoku University in Japan. Abstract: "This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100- μm -cubed blue μ LED... » read more

Auto Displays: Bigger, Brighter, More Numerous


Displays are rapidly becoming more critical to the central brains in automobiles, accelerating the adoption and evolution of this technology to handle multiple types of audio, visual, and other data traffic coming into and flowing throughout the vehicle. These changes are having a broad impact on the entire design-through-manufacturing flow for display chip architectures. In the past, these ... » read more

System Bits: July 15


Silicon oxide memories Thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods, Rice University’s silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production. Rice’s silicon oxide memories are a type of two-terminal, “resistive random-access memory” (RRAM) ... » read more