tag: electron mobility

Designing for Data Flow
By Marie C. Baca - 02 Mar, 2023 - Comments: 0

Movement and management of data inside and outside of chips is becoming a central theme for a growing number of electronic systems, and a huge challenge for all of them. Entirely new architectures and techniques are being developed to reduce the movement of data and to accomplish more per compute cycle, and to speed the transfer of data between various components on a chip and between chips ... » read more

Devices And Transistors For The Next 75 Years
By Laura Peters - 16 Feb, 2023 - Comments: 0

The 75th anniversary of the invention of the transistor sparked a lively panel discussion at IEDM, spurring debate about the future of CMOS, the role of III-V and 2D materials in future transistors, and what will be the next great memory architecture.[1] Industry veterans from the memory, logic, and research communities see high-NA EUV production, NAND flash with 1,000 layers, and hybrid bon... » read more

High Electron Mobility in Strained GaAs Nanowires
By Technical Paper Link - 21 Dec, 2021 - Comments: 0

Abstract: "Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where elec... » read more

The Good And Bad Of 2D Materials
By Katherine Derbyshire - 27 Feb, 2019 - Comments: 0

Despite years of warnings about reaching the limits of silicon, particularly at leading-edge process nodes where electron mobility is limited, there still is no obvious replacement. Silicon’s decades-long dominance of the integrated circuit industry is only partly due to the material’s electronic properties. Germanium, gallium arsenide, and many other semiconductors offer superior mobili... » read more

Re-Engineering The FinFET
By Mark LaPedus - 13 Nov, 2014 - Comments: 0

The semiconductor industry is still in the early stages of the [getkc id="185" kc_name="finFET"] era, but the [getkc id="26" kc_name="transistor"] technology already is undergoing a dramatic change. The fins themselves are getting a makeover. In the first-generation finFETs, the fins were relatively short and tapered. In the next wave, the fins are expected to get taller, thinner and more re... » read more

Manufacturing Bits: Jan. 14
By Mark LaPedus - 14 Jan, 2014 - Comments: 0

MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more

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