Manufacturing Bits: Jan. 17


GOOI FETs The next-generation power semiconductor market is heating up. Two wide-bandgap technologies—gallium nitride (GaN) on silicon devices and silicon carbide (SiC) MOSFETs—are ramping up in the power semi market. In addition, the industry is also exploring various futuristic technologies, such as bulk vertical GaN, diamond FETs and others. Purdue University has demonstrated another... » read more

Manufacturing Bits: March 15


More multi-beam The multi-beam e-beam market is a hot topic. For example, Intel is quietly in the process of acquiring IMS Nanofabrication, a developer of multi-beam e-beam tools for mask writing applications. Meanwhile, at the recent SPIE Advanced Lithography conference, Mapper Lithography disclosed new upgrades for its multi-beam e-beam tool for use in direct-write lithography application... » read more

Manufacturing Bits: Aug. 27


Growing tubes Single-wall carbon nanotubes could one day be used in electronics, optoelectronics, biomedical imaging and other applications. But the synthesis of nanotubes with defined chiralities has been a stumbling block. A chiral molecule is a molecule that has a non-superposable mirror image. The University of Southern California has shown that chirality-pure short nanotubes can be use... » read more