Manufacturing Bits: Jan. 17


GOOI FETs The next-generation power semiconductor market is heating up. Two wide-bandgap technologies—gallium nitride (GaN) on silicon devices and silicon carbide (SiC) MOSFETs—are ramping up in the power semi market. In addition, the industry is also exploring various futuristic technologies, such as bulk vertical GaN, diamond FETs and others. Purdue University has demonstrated another... » read more

Manufacturing Bits: Nov. 3


World’s fastest phototransistor The University of Wisconsin-Madison has developed what the university claims is the world’s fastest and most responsive flexible silicon phototransistor. Phototransistors are semiconductor light sensors. They are based on a transistor with a transparent cover. They provide better sensitivity than a photodiode. The futuristic phototransistor from the Un... » read more

EU Due Diligence For Conflict Minerals Focuses Upstream, For Now


By Rania Georgoutsakou EU proposed legislation on responsible sourcing of ‘conflict minerals’, published on 5 March 2014, will create a voluntary scheme focusing on upstream suppliers that should help downstream users get the information they need to comply with the U.S. Dodd Frank Act. The EU proposals largely address concerns raised by SEMI and other industry associations, but things cou... » read more