Multi-Patterning Issues At 7nm, 5nm


Continuing to rely on 193nm immersion lithography with multiple patterning is becoming much more difficult at 7nm and 5nm. With the help of various resolution enhancement techniques, optical lithography using a deep ultraviolet excimer laser has been the workhorse patterning technology in the fab since the early 1980s. It is so closely tied with the continuation of [getkc id="74" comment="Mo... » read more

Inside EUV Resists


Andrew Grenville, chief executive of resist maker Inpria, sat down with Semiconductor Engineering to talk about photoresists for extreme ultraviolet (EUV) lithography. What follows are excerpts of that conversation. SE: Photoresists are a critical part of lithography. Resists are light-sensitive materials. They form patterns on a surface when exposed to light. For EUV, they are critical. Wha... » read more

More EUV Mask Gaps


Extreme ultraviolet (EUV) lithography is at a critical juncture. After several delays and glitches, [gettech id="31045" comment="EUV"] is now targeted for 7nm and/or 5nm. But there are still a number of technologies that must come together before EUV is inserted into mass production. And if the pieces don’t fall into place, EUV could slip again. First, the EUV source must generate more ... » read more

Why EUV Is So Difficult


For years, extreme ultraviolet (EUV) lithography has been a promising technology that was supposed to help enable advanced chip scaling. But after years of R&D, EUV is still not in production despite major backing from the industry, vast resources and billions of dollars in funding. More recently, though, [gettech id="31045" comment="EUV"] lithography appears to be inching closer to pos... » read more

How Many Nanometers?


What’s the difference between a 10nm and a 7nm chip? That should be a straightforward question. Math, after all, is the only pure science. But as it turns out, the answer is hardly science—even if it is all about numbers. Put in perspective, at 65nm, companies defined the process node by the half pitch of the first metal layer. At 40/45nm, with the cost and difficulty of developing n... » read more

To 10nm And Beyond


Hong Hao, senior vice president of the foundry business at Samsung Semiconductor, sat down with Semiconductor Engineering to discuss the future direction of transistors, process technology, lithography and other topics. What follows are excerpts of those conversations. SE: Samsung recently rolled out its 10nm finFET technology. It appears that Samsung is the world’s first company to ship 1... » read more

What Happened To Inverse Lithography?


Nearly 10 years ago, the industry rolled out a potentially disruptive technique called inverse lithography technology (ILT). But ILT was ahead of its time, causing the industry to push out the technology and relegate it to niche-oriented applications. Today, though, ILT is getting new attention as the semiconductor industry pushes toward 7nm, and perhaps beyond. ILT is not a next-generation ... » read more

10nm FinFET Market Heats Up


The 10nm finFET market is heating up in the foundry business amid the ongoing push to develop chips at advanced nodes. Not long ago, Intel announced its 10nm finFET process, with plans to ramp up the technology in 2017. Then, TSMC recently introduced its 10nm process, with plans to move into production by the fourth quarter of 2016. Now, Samsung Electronics said that it has commenced mass... » read more

450mm And Other Emergency Measures


Talk about boosting wafer sizes from 300mm to 450mm has been creeping back into presentations and discussions at conferences over the past couple months. Earlier this year, discussions focused on panel-level packaging. These are basically similar approaches to the same problem, which is that wafers need to be larger to reap efficiencies out of device scaling. Whether either of these approach... » read more

Mask Maker Worries Grow


Photomasks are becoming more complex and expensive at each node, thereby creating a number of challenges on several fronts. For one thing, the features on the [getkc id="265" kc_name="photomask"] are becoming smaller and more complex at each node. Second, the number of masks per mask-set are increasing as a result of multiple patterning. Third, it costs more to build and equip a new mask fab... » read more

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