What’s Missing In EUV?


Extreme ultraviolet (EUV) lithography is expected to move into production at 7nm and/or 5nm, but as previously reported, there are some gaps in the arena. At one time, the power source was the big problem, but that appears to be solved in the near term. Now, a phenomenon called stochastic effects, or random variations, are the biggest challenge for EUV lithography. But at most events, th... » read more

FinFET Metrology Challenges Grow


Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

Chipmakers Look Beyond Scaling


Gary Patton, CTO of GlobalFoundries, sat down with Semiconductor Engineering to discuss the rollout of EUV, the rising cost of designing chips at the most advanced nodes, and the growing popularity of 22nm planar FD-SOI in a number of markets. What follows are excerpts of that conversation. SE: You've just begun deploying EUV. Are you experiencing any issues? Patton: It's a very complicat... » read more

More Lithography/Mask Challenges


Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

The Case For Chiplets


Discussion about chiplets is growing as the cost of developing chips at 10/7nm and beyond passes well beyond the capabilities of many chipmakers. Estimates for developing 5nm chips (the equivalent 3nm for TSMC and Samsung) are well into the hundreds of millions of dollars just for the NRE costs alone. Masks costs will be in the double-digit millions of dollars even with EUV. And that's assum... » read more

More Nodes, New Problems


The rollout of leading-edge process nodes is accelerating rather than slowing down, defying predictions that device scaling would begin to subside due to rising costs and the increased difficulty of developing chips at those nodes. Costs are indeed rising. So are the number of design rules, which reflect skyrocketing complexity stemming from multiple patterning, more devices on a chip, and m... » read more

Next EUV Issue: Mask 3D Effects


As extreme ultraviolet (EUV) lithography moves closer to production, the industry is paying more attention to a problematic phenomenon called mask 3D effects. Mask 3D effects involve the photomask for EUV. In simple terms, a chipmaker designs an IC, which is translated from a file format into a photomask. The mask is a master template for a given IC design. It is placed in a lithography scan... » read more

The Week In Review: Manufacturing


Trade The trade tensions are building between the U.S. and China. In the latest move, the U.S. Department of Commerce has imposed a ban on U.S. companies selling chips to ZTE, a Chinese telecom equipment and mobile phone vendor. The ban has been implemented on ZTE for seven years after the firm “was caught illegally shipping U.S. goods to Iran,” according to a report from Reuters. This... » read more

Design Rule Complexity Rising


Variation, edge placement error, and a variety of other issues at new process geometries are forcing chipmakers and EDA vendors to confront a growing volume of increasingly complex, and sometimes interconnected design rules to ensure chips are manufacturable. The number of rules has increased to the point where it's impossible to manually keep track of all of them, and that has led to new pr... » read more

Searching For EUV Defects


Chipmakers hope to insert extreme ultraviolet (EUV) lithography at 7nm and/or 5nm, but several challenges need to be solved before this oft-delayed technology can be used in production. One lingering issue that is becoming more worrisome is how to find defects caused by [gettech id="31045" comment="EUV"] processes. These processes can cause random variations, also known as stochastic effects... » read more

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