EUV’s New Problem Areas

Extreme ultraviolet (EUV) lithography is moving closer to production, but problematic variations—also known as stochastic effects—are resurfacing and creating more challenges for the long-overdue technology. GlobalFoundries, Intel, Samsung and TSMC hope to insert [gettech id="31045" comment="EUV"] lithography into production at 7nm and/or 5nm. But as before, EUV consists of several compo... » read more

AI: The Next Big Thing

The next big thing isn't actually a thing. It's a set of finely tuned statistical models. But developing, optimizing and utilizing those models, which collectively fit under the umbrella of artificial intelligence, will require some of the most advanced semiconductors ever developed. The demand for artificial intelligence is almost ubiquitous. As with all "next big things," it is a horizonta... » read more

DSA Re-Enters Litho Picture

By Mark LaPedus and Ed Sperling Directed self-assembly (DSA) is moving back onto the patterning radar screen amid ongoing challenges in lithography. Intel continues to have a keen interest in [gettech id="31046" t_name="DSA"], while other chipmakers are taking another hard look at the technology, according to multiple industry sources. DSA isn't like a traditional [getkc id="80" kc_name="... » read more

The Week In Review: Manufacturing

Fab tools Samsung Electronics has broken ground on a new extreme ultraviolet (EUV) lithography facility in Hwaseong, South Korea. The new EUV facility is expected to be completed within the second half of 2019 with production slated for 2020. The initial investment in the new EUV line is projected to reach $6 billion by 2020. Imec and Cadence Design Systems have collaborated on the develop... » read more

Executive Insight: Wally Rhines

Wally Rhines, president and CEO of [getentity id="22017" e_name="Mentor, a Siemens Business"], sat down with Semiconductor Engineering to discuss a wide range of industry and technology changes and how that will play out over the next few years. What follows are excerpts of that conversation. SE: What will happen in the end markets? Rhines: The end markets are perhaps more exciting from a... » read more

Tech Talk: 5/3nm Parasitics

Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. » read more

What EUV Brings To The Table

After many years of hearing that EUV is almost ready for prime time, the tide is finally coming in. A decade of slow but steady progress has resulted in exposure tools that can expose on the order of 1,000 wafers a day on a regular basis. This may be shy of the requirements for high volume manufacturing (HVM), but it is certainly more than enough to support solid development programs and pilot ... » read more

New Nodes, Materials, Memories

Ellie Yieh, vice president and general manager of Advanced Product Technology Development at [getentity id="22817" e_name="Applied Materials"], and head of the company's Maydan Technology Center, sat down with Semiconductor Engineering to talk about challenges, changes and solutions at advanced nodes and with new applications. What follows are excerpts of that conversation. SE: How far can w... » read more

EUV Reticle Print Verification With Advanced Broadband Optical Wafer Inspection And e-Beam Review Systems

As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm design rule devices, there is an immediate and imperative need to identify the EUV reticle (mask) inspection methodologies. The introduction of additional particle sources due to the vacuum system and potential growth of haze defects or other film or particle depositions on the reticle, in comb... » read more

Nodes Vs. Nodelets

Foundries are flooding the market with new nodes and different process options at existing nodes, spreading confusion and creating a variety of challenges for chipmakers. There are full-node processes, such as 10nm and 7nm, with 5nm and 3nm in R&D. But there also is an increasing number of half-nodes or "node-lets" being introduced, including 12nm, 11nm, 8nm, 6nm and 4nm. Node-lets ar... » read more

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