CMOS-Embedded STT-MRAM Arrays In 2x nm Nodes For GP-MCU Applications


Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density manufacturability at small geometries. In this paper we present an unprecedented demonstration of a robust STT-MRAM technology designed in a 2x nm CMOS- embedded 40 Mb array. Key features are full a... » read more

Big Memory Shift Ahead


System architecture has been driven by the performance of [getkc id="22" kc_name="memory"]. Processor designers would have liked all of the memory be fast [getkc id="92" kc_name="SRAM"], placed on-chip for maximum performance, but that was not an option. Memory had to be fabricated as separate chips and connected via a Printed Circuit Board (PCB). That limited the number of available I/O ports ... » read more

Universal Memories Fall Back To Earth


By Mark LaPedus Ten years ago, Intel Corp. declared that flash memory would stop scaling at 65nm, prompting the need for a new replacement technology. Thinking the end was near for flash, a number of companies began to develop various next-generation memory types, such as 3D chips, FeRAM, MRAM, phase-change memory (PCM), and ReRAM. Many of these technologies were originally billed as “uni... » read more