tag: Ferroelectric Memory

Ferroelectric Memories Answer Call For Non-Volatile Alternatives
By Katherine Derbyshire - 21 Sep, 2023 - Comments: 0

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

Research Bits: August 29
By Jesse Allen - 29 Aug, 2023 - Comments: 0

Resistive switching with hafnium oxide Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching memory device that processes data in a similar way as the synapses in the human brain. At the atomic level, hafnium oxide has no structure, with the hafni... » read more

28nm-HKMG-Based FeFET Devices For Synaptic Applications
By Technical Paper Link - 09 May, 2023 - Comments: 0

A technical paper titled "28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview" was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries. Abstract This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric f... » read more

Ferroelectrics: The Dream Of Negative Capacitance
By Katherine Derbyshire - 15 Dec, 2022 - Comments: 0

Ferroelectrics are getting a serious re-examination, as chipmakers look for new options to maintain drive current. Ferroelectric materials can provide non-volatile memory, serving an important functional gap somewhere between DRAM and flash memory. Indeed, ferroelectrics for memory and 2D channels for transistors were two highlights of the recent IEEE Electron Device Meeting. Ferroelectri... » read more

MAC Operation on 28nm High-k Metal Gate FeFET-based Memory Array with ADC (Fraunhofer IPMS/GF)
By Technical Paper Link - 01 Dec, 2022 - Comments: 0

A technical paper titled "Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array" was published by researchers at Fraunhofer IPMS and GlobalFoundries. Abstract "This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide Semiconductor (CMOS) and ferroelectric fi... » read more

SOT-MRAM To Challenge SRAM
By Bryon Moyer - 13 Jan, 2022 - Comments: 1

In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits. The key advantages of SOT-MRAM technology are the pr... » read more

Power/Performance Bits: Jan. 13
By Jesse Allen - 13 Jan, 2020 - Comments: 0

Ferroelectric memory Researchers at the Moscow Institute of Physics and Technology and North Carolina State University developed a ferroelectric memory cell and a method for measuring the electric potential distribution across a ferroelectric capacitor, an important aspect of creating new nonvolatile ferroelectric devices. The team's new ferroelectric memory cell is made from a 10nm thick z... » read more

Possible Uses Narrow For Negative Capacitance FETs
By Katherine Derbyshire - 20 Jun, 2019 - Comments: 1

The discovery of a ferroelectric phase in hafnium dioxide (HfO2) has sparked significant interest in opportunities for integration of ferroelectric transistors and memories with conventional CMOS devices. Demonstrations of “negative capacitance” behavior in particular suggest these devices might evade the 60 mV/decade limit on subthreshold swing, thereby improving transistor efficiency. ... » read more

Next-Gen Memory Ramping Up
By Mark LaPedus - 16 Aug, 2018 - Comments: 6

The next-generation memory market is heating up as vendors ramp a number of new technologies, but there are some challenges in bringing these products into the mainstream. For years, the industry has been working on a variety of memory technologies, including carbon nanotube RAM, FRAM, MRAM, phase-change memory and ReRAM. Some are shipping, while others are in R&D. Each memory type is di... » read more

New Embedded Memories Ahead
By Mark LaPedus - 25 Jan, 2017 - Comments: 0

The embedded memory market is beginning to heat up, fueled by a new wave of microcontrollers (MCUs) and related chips that will likely require new and more capable nonvolatile memory types. The industry is moving on several different fronts in the embedded memory landscape. On one front, traditional solutions are advancing. On another front, several vendors are positioning the next-generatio... » read more

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