Power/Performance Bits: Sept. 27

Self-organizing circuits Researchers studying the behavior of nanoscale materials at the Department of Energy's Oak Ridge National Laboratory discovered that due an unusual feature of certain complex oxides called phase separation, individual nanoscale regions can behave as self-organized circuit elements, which could support new multifunctional types of computing architectures. "Within a... » read more

Power/Performance Bits: April 19

Ferroelectric non-volatile memory Scientists from the Moscow Institute of Physics and Technology (MIPT), the University of Nebraska, and the University of Lausanne in Switzerland succeeded in growing ultra-thin (2.5-nanometer) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. The film was g... » read more