Front-end patterning and epitaxy approach on Si photonics 220nm SOI substrates


A new technical paper titled "Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator" was published by researchers at Cardiff University and University of Southampton. Abstract "Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by di... » read more

On The Reverse Breakdown Behavior Of GaAs PIN Diodes For High Power Applications


In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode... » read more

3D Structuring Inside GaAs by Ultrafast Laser Inscription


A new technical paper titled "Burst mode enabled ultrafast laser inscription inside gallium arsenide" was published by researchers at LP3 Laboratory in France, a joint research unit of Aix-Marseille University (AMU) and CNRS. "We investigate the possibility of using THzrepetition-rate burst mode for ULI inside GaAs, a material that cannot be internally processed with single femtosecond pulse... » read more

150MM Alive and Kicking


Did you think chip making on 150mm wafers was a thing of the past? Think again. Many of the megatrends shaping our collective futures—mobility, autonomous driving and electric vehicles, 5G wireless communications, augmented- and virtual reality (AR/VR), and healthcare—depend on innovations created on the 150mm wafer size. While attention is often riveted on the race to the leading-edge n... » read more

Chip Dis-Integration


Just because something can be done does not always mean that it should be done. One segment of the semiconductor industry is learning the hard way that continued chip integration has a significant downside. At the same time, another another group has just started to see the benefits of consolidating functionality onto a single substrate. Companies that have been following Moore's Law and hav... » read more

RF SOI Wars Begin


Several foundries are expanding their fab capacities for RF SOI processes amid huge demand and shortages of this technology for smartphones. A number of foundries are increasing their 200mm RF SOI fab capacities to meet soaring demand. Then, GlobalFoundries, TowerJazz, TSMC and UMC are expanding or bringing up RF SOI processes in 300mm fabs in an apparent race to garner the first wave of RF ... » read more

Silicon’s Long Game


The era of all-silicon substrates and copper wires may be coming to an end. Progress in the future increasingly depends on more exotic combinations of materials that are developed for specific applications. But after years of predicting the death of silicon, it appears those predictions may be premature. That's not always obvious, given the growing number of chemical combinations being creat... » read more

Progress In Flexible Electronics


Flexible electronics have been proposed for a wide variety of applications, from pulse and activity monitoring to electrolyte balance measurements. That makes generalizations difficult, but most proposed devices involve some combination of [getkc id="187" kc_name="sensors"], a power source, onboard data storage and analysis electronics, and some form of communications for configuration and data... » read more

Silicon Photonics Comes Into Focus


Silicon photonics is attracting growing attention and investment as a companion technology to copper wiring inside of data centers, raising new questions about what comes next and when. Light has always been the ultimate standard for speed. It requires less energy to move large quantities of data, generates less heat than electricity, and it can work equally well over long or short distances... » read more

RF GaN Gains Steam


The RF [getkc id="217" kc_name="gallium nitride"] (GaN) device market is heating up amid the need for more performance with better power densities in a range of systems, such as infrastructure equipment, missile defense and radar. On one front, for example, RF GaN is beginning to displace a silicon-based technology for the power amplifier sockets in today’s wireless base stations. GaN is m... » read more

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