tag: gallium nitride

Enabling New Applications With SiC IGBT And GaN HEMT For Power Module Design
By Shela Aboud - 18 Apr, 2024 - Comments: 0

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and impactful electrification is now under way for electric vehicles (EVs). Beyond the transition to electric engines, several new features and technologies are driving the electrification of vehicles... » read more

What’s Next For Power Electronics? Beyond Silicon
By Emily Yan - 29 Feb, 2024 - Comments: 0

For more than half a century, silicon has been the bedrock of power electronics. Yet as silicon meets its physical limitations in higher-power, higher-temperature applications, the industry’s relentless pursuit of more efficient power systems has ushered in the wide bandgap (WBG) semiconductors era. The global WBG semiconductors market reached $1.6 billion in 2022, with an estimated CAGR of ... » read more

Why Is The Power Device Market So Hot Right Now?
By Dermott Lynch - 25 Jan, 2024 - Comments: 0

Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using TCAD To Simulate Wide-Bandgap Materials For Electronics Design
By Shela Aboud - 22 Jan, 2024 - Comments: 0

Wide-bandgap (WBG) semiconductors are a class of materials that can offer a range of advantages over silicon. These materials can operate at higher voltages and higher temperatures, serving as critical enablers of innovation in Power and RF applications and functioning in a wider range of environments that are sometimes extreme. Electronics applications benefit from these wide-bandgap materials... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

Addressing Trench Structures And Larger Wafers For Power Devices
By Vamsi Velidandla - 07 Nov, 2023 - Comments: 0

Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Four Vertical Power Delivery Architectures For Emerging Packaging and Integration Platforms (UIC)
By Technical Paper Link - 16 Oct, 2023 - Comments: 0

A technical paper titled “Vertical Power Delivery for Emerging Packaging and Integration Platforms – Power Conversion and Distribution” was published by researchers at University of Illinois Chicago. Abstract: "Efficient delivery of current from PCB to point-of-load (POL) is a primary concern in modern high-power high-density integrated systems. Traditionally, a 48 V power signal is con... » read more

The Ultimate Guide To PCB Layout For GaN Transistors
By Francesco Di Domenico - 05 Oct, 2023 - Comments: 0

In the ever-evolving landscape of power electronics, the emergence of gallium nitride (GaN) transistors has ignited a revolution by offering unparalleled benefits, including remarkable efficiency and power density enhancements. The art of PCB layout has been a crucial component in power electronic design for over four decades now, ever since the advent of switching power supplier. From the ea... » read more

Noise Parameter Survey Of Millimeter Wave GaN HEMT Technologies
By Technical Paper Link - 03 Oct, 2023 - Comments: 0

A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE Systems, Pseudolithic, Northrop Grumman Corporation, and University of California Santa Barbara. "This article presents a set of measured benchmarks for the noise and gain performance of si... » read more

Improving ML-Based Device Modeling Using Variational Autoencoder Techniques
By Technical Paper Link - 27 Sep, 2023 - Comments: 0

A technical paper titled “Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques” was published by researchers at Commonwealth Scientific and Industrial Research Organisation (CSIRO), Peking University, National University of Singapore, and University of New South Wales. Abstract: "The semiconductors industry benefits greatly from the integ... » read more

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