Too Many Rules

By Ed Sperling The number of restrictive design rules that have to be dealt with by routers at 28nm and beyond has increased by several orders of magnitude compared with several generations ago, creating havoc in the automated tools world and slowing down the entire design process. At a time when market windows are shrinking, complexity is making it harder to meet even the old schedules. Th... » read more

Mix-And-Match Power Options

By Ann Steffora Mutschler Choices abound today when it comes to considering a node shrink. Fully depleted silicon on insulator (FD-SOI) and finFET technologies along with other advanced transistor options are being evaluated, both together and independently of the other. It is possible to implement finFET on bulk 28nm CMOS or finFET on an FD-SOI process, for example. It is also possible ... » read more

Waiting for Porous Low-k

I'm working on a longer article on low-k dielectric integration, but in the meantime I wanted to pass along an observation from Joubert Olivier of LTM-CNRS, in his presentation at the Materials Research Society Spring Meeting. Asked about the prospects for low-k integration, he reminded the audience that even if an integration scheme is able to achieve good selectivity between the hard mask ... » read more