Looking Forward To SPIE, And Beyond


On the eve of this year’s SPIE Advanced Lithography + Patterning conference, I took a look at the IEEE Devices and Systems Roadmap’s lithography section. It’s especially notable for the emergence of EUV lithography, which has quickly become critical for advanced logic. High-NA tools to support still smaller dimensions are on the horizon. In the near-term, though, the key challenge is not ... » read more

Underlayer Optimization Method For EUV Lithography


Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

Patterning Problems Pile Up


Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more