New Patterning Options Emerging


Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

Searching For EUV Defects


Chipmakers hope to insert extreme ultraviolet (EUV) lithography at 7nm and/or 5nm, but several challenges need to be solved before this oft-delayed technology can be used in production. One lingering issue that is becoming more worrisome is how to find defects caused by [gettech id="31045" comment="EUV"] processes. These processes can cause random variations, also known as stochastic effects... » read more

More Lithography/Mask Challenges


Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

What Happened To Nanoimprint Litho?


Nanoimprint lithography (NIL) is re-emerging amid an explosion of new applications in the market. Canon, EV Group, Nanonex, Suss and others continue to develop and ship NIL systems for a range of markets. NIL is different than conventional lithography and resembles a stamping process. Initially, a lithographic system forms a pattern on a template based on a pre-defined design. Then, a separa... » read more

Self-Aligned Block And Fully Self-Aligned Via For iN5 Metal 2 Self-Aligned Quadruple Patterning


This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, co... » read more

EUV’s New Problem Areas


Extreme ultraviolet (EUV) lithography is moving closer to production, but problematic variations—also known as stochastic effects—are resurfacing and creating more challenges for the long-overdue technology. GlobalFoundries, Intel, Samsung and TSMC hope to insert [gettech id="31045" comment="EUV"] lithography into production at 7nm and/or 5nm. But as before, EUV consists of several compo... » read more

DSA Re-Enters Litho Picture


By Mark LaPedus and Ed Sperling Directed self-assembly (DSA) is moving back onto the patterning radar screen amid ongoing challenges in lithography. Intel continues to have a keen interest in [gettech id="31046" t_name="DSA"], while other chipmakers are taking another hard look at the technology, according to multiple industry sources. DSA isn't like a traditional [getkc id="80" kc_name="... » read more

The Next 5 Years Of Chip Technology


Semiconductor Engineering sat down to discuss the future of scaling, the impact of variation, and the introduction of new materials and technologies, with Rick Gottscho, CTO of [getentity id="22820" comment="Lam Research"]; Mark Dougherty, vice president of advanced module engineering at [getentity id="22819" comment="GlobalFoundries"]; David Shortt, technical fellow at [getentity id="22876" co... » read more

Variation Spreads At 10/7nm


Variation between different manufacturing equipment is becoming increasingly troublesome as chipmakers push to 10/7nm and beyond. Process variation is a well-known phenomenon at advanced nodes. But some of that is actually due to variations in equipment—sometimes the exact same model from the same vendor. Normally this would fall well below the radar of the semiconductor industry. But as t... » read more

Overlay Challenges On The Rise


The overlay metrology equipment market is heating up at advanced nodes as the number of masking layers grows and the size of the features that need to be aligned continue to shrink. Both ASML and KLA-Tencor recently introduced new [getkc id="307" kc_name="overlay"] metrology systems, seeking to address the increasing precision required for lines, cuts and other features on each layer. At 10/... » read more

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