Power/Performance Bits: Oct. 18


Speeding up memory with T-rays Scientists at the Moscow Institute of Physics and Technology (MIPT), the University of Regensburg in Germany, Radboud University Nijmegen in the Netherlands, and Moscow Technological University proposed a way to improve the performance of memory through using T-waves, or terahertz radiation, as a means of resetting memory cells. This process is several thousand... » read more

Power/Performance Bits: April 19


Ferroelectric non-volatile memory Scientists from the Moscow Institute of Physics and Technology (MIPT), the University of Nebraska, and the University of Lausanne in Switzerland succeeded in growing ultra-thin (2.5-nanometer) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. The film was g... » read more

Power/Performance Bits: March 22


Superconducting memory A group of scientists from the Moscow Institute of Physics and Technology and the Moscow State University developed a fundamentally new type of memory cell based on superconductors, which they believe will be able to work hundreds of times faster than memory devices commonly used today. The basic memory cells are based on quantum effects in "sandwiches" of supercond... » read more