Power/Performance Bits: Oct. 11


Getting to 1nm Researchers at the Lawrence Berkeley National Laboratory, UC Berkeley, University of Texas at Dallas, and Stanford University created a transistor with a working 1nm gate from carbon nanotubes and molybdenum disulfide (MoS2). "The semiconductor industry has long assumed that any gate below 5 nanometers wouldn't work, so anything below that was not even considered," said fir... » read more

Power/Performance Bits: May 10


Non-toxic thin-films A team at Australia's University of New South Wales achieved the world's highest efficiency using flexible solar cells that are non-toxic and cheap to make, with a record 7.6% efficiency in a 1cm2 area thin-film CZTS cell. Unlike its thin-film competitors, CZTS cells are made from abundant materials: copper, zinc, tin and sulphur, and has none of the toxicity problems... » read more

Manufacturing Bits: March 22


Tunable windows Harvard University has put a new twist on tunable windows. Researchers have devised a new manufacturing technique that can change the opacity of a window. With the flip of a switch, the window can become cloudy, clear or somewhere in the middle. Tunable windows, which aren’t new, rely on electrochemical reactions. Typically, the glass is coated with materials using vacuum... » read more

Manufacturing Bits: Dec. 29


Printing hair Using a low-cost, 3D printing technique, Carnegie Mellon University has found a way to produce hair-like strands and fibers. The printer produces plastic hair strand by strand. It takes about 20-25 minutes to generate hair on 10 square millimeters. A video can be seen here. [caption id="attachment_24544" align="alignleft" width="300"] 3D printed hair (Photo: Carnegie Mellon... » read more

Manufacturing Bits: Jan. 14


MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more