RF GaN Gains Steam


The RF [getkc id="217" kc_name="gallium nitride"] (GaN) device market is heating up amid the need for more performance with better power densities in a range of systems, such as infrastructure equipment, missile defense and radar. On one front, for example, RF GaN is beginning to displace a silicon-based technology for the power amplifier sockets in today’s wireless base stations. GaN is m... » read more

Manufacturing Bits: July 28


Molecular chips Researchers from various organizations have devised a transistor consisting of a single molecule and a few atoms. The work could one day lead to the integration of molecular-based devices with existing semiconductor technologies. This work was conducted by Paul-Drude-Institut für Festkörperelektronik (PDI), Freie Universität Berlin (FUB), NTT and the U.S. Naval Research L... » read more

Manufacturing Bits: Dec. 23


Higgs boson sensors At the recent 2014 IEEE International Electron Devices Meeting (IEDM) in San Francisco, CERN described the tiny hybrid pixel detectors used at the Large Hadron Collider (LHC). Using CMOS technology, hybrid pixel detectors identify and tag individual sub-atomic particles at fast speeds. CERN, the European Organization for Nuclear Research, is a particle physics laboratory... » read more

Manufacturing Bits: Nov. 4


World’s fastest IC amplifier Northrop Grumman has set a record for the world’s fastest integrated circuit amplifier. The record has been recognized by officials from Guinness World Records. The amplifier uses 10 transistor stages to reach an operating speed of one terahertz, or one trillion cycles per second. This surpassed the company's own record of 850 billion cycles per second set i... » read more