tag: PFET

Building CFETs With Monolithic And Sequential 3D
By Katherine Derbyshire - 22 Feb, 2024 - Comments: 0

Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, uses multiple channel layers to maintain the overall channel length and necessary drive current while continuing to reduce the standard cell footprint. The follow-on technology, the CFET, pushes... » read more

Moving To GAA FETs
By Katherine Derbyshire - 20 Feb, 2020 - Comments: 2

How do you measure the size of a transistor? Is it the gate length, or the distance between the source and drain contacts? For planar transistors, the two values are approximately the same. The gate, plus a dielectric spacer, fits between the source and drain contacts. The contact pitch, limited by the smallest features that the lithography process can print, determines how many transistors ... » read more

External Resistance Reduction By Nanosecond Laser Anneal In Si/SiGe CMOS Technology
By Veeco - 18 Sep, 2019 - Comments: 0

Authors: 1Oleg Gluschenkov, 1Heng Wu, 1Kevin Brew, 2Chengyu Niu, 1Lan Yu, 1Yasir Sulehria, 1Samuel Choi, 22Curtis Durfee, 1James Demarest, 1Adra Carr, 3Shaoyin Chen, 3Jim Willis, 3Thirumal Thanigaivelan, 1Fee-li Lie, 2Walter Kleemeier, and 1Dechao Guo 1IBM Research, 257 Fuller Road, Albany, NY 12203, USA, email: [email protected] 2GLOBALFOUNDRIES Inc., Albany, NY, USA, 3ULTRATECH, a division ... » read more

The Good And Bad Of 2D Materials
By Katherine Derbyshire - 27 Feb, 2019 - Comments: 0

Despite years of warnings about reaching the limits of silicon, particularly at leading-edge process nodes where electron mobility is limited, there still is no obvious replacement. Silicon’s decades-long dominance of the integrated circuit industry is only partly due to the material’s electronic properties. Germanium, gallium arsenide, and many other semiconductors offer superior mobili... » read more

Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process
By KLA - 20 Sep, 2018 - Comments: 0

By Ian Tolle, GlobalFoundries, and Michael Daino, KLA-Tencor During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain are not sufficiently protected, the etch can damage the active region and render the FET inoperative. Different materials are used in t... » read more

More Lithography/Mask Challenges (Part 3)
By Mark LaPedus - 16 May, 2018 - Comments: 1

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

What’s Next For Transistors
By Mark LaPedus - 23 Jan, 2017 - Comments: 1

The IC industry is moving in several different directions at once. The largest chipmakers continue to march down process nodes with chip scaling, while others are moving towards various advanced packaging schemes. On top of that, post-CMOS devices, neuromorphic chips and quantum computing are all in the works. Semiconductor Engineering sat down to discuss these technologies with Marie Semeri... » read more

Uncertainty Grows For 5nm, 3nm
By Mark LaPedus - 19 Dec, 2016 - Comments: 4

As several chipmakers ramp up their 10nm finFET processes, with 7nm just around the corner, R&D has begun for 5nm and beyond. In fact, some are already moving full speed ahead in the arena. [getentity id="22586" comment="TSMC"] recently announced plans to build a new fab in Taiwan at a cost of $15.7 billion. The proposed fab is targeted to manufacture TSMC’s 5nm and 3nm processes, whic... » read more

E-beam Vs. Optical Inspection
By Mark LaPedus - 11 Jul, 2016 - Comments: 0

The wafer inspection business is heating up as chipmakers encounter new and tiny killer defects in advanced devices. Last month ASML Holding entered into an agreement to acquire Hermes Microvision (HMI), the world’s largest e-beam inspection vendor, for $3.1 billion. The proposed move propelled ASML into the e-beam wafer inspection market. In addition, [getentity id="22817" e_name="Appl... » read more

2.5D Becomes A Reality
By Ed Sperling - 11 May, 2016 - Comments: 0

Semiconductor Engineering sat down to discuss 2.5D and advanced packaging with Max Min, senior technical manager at [getentity id="22865" e_name="Samsung"]; Rob Aitken, an [getentity id="22186" comment="ARM"] fellow; John Shin, vice president at [getentity id="22903" e_name="Marvell"]; Bill Isaacson, director of ASIC marketing at [getentity id="22242" e_name="eSilicon"]; Frank Ferro, senior di... » read more

← Older posts

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy