A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines


Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

Breaking The 2nm Barrier


Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

Building An MRAM Array


MRAM is gaining traction in a variety of designs as a middle-level type of memory, but there are reasons why it took so long to bring this memory to market. A typical magnetoresistive RAM architecture is based on CoFeB magnetic layers, with an MgO tunneling barrier. The reference layer should have zero net magnetization to make sure that it doesn’t influence the orientation of the free lay... » read more

Controlling Variability And Cost At 3nm And Beyond


Richard Gottscho, executive vice president and CTO of Lam Research, sat down with Semiconductor Engineering to talk about how to utilize more data from sensors in manufacturing equipment, the migration to new process nodes, and advancements in ALE and materials that could have a big impact on controlling costs. What follows are excerpts of that conversation. SE: As more sensors are added int... » read more

Electroplating IC Packages


The electrochemical deposition (ECD) equipment market for IC packaging is heating up as 2.5D, 3D and fan-out technologies begin to ramp. [getentity id="22817" e_name="Applied Materials"]  recently rolled out an ECD system for IC packaging. In addition, Lam Research, TEL and others compete in the growing but competitive ECD equipment market for packaging. ECD—sometimes referred to as pl... » read more

The Trouble With MEMS


The advent of the Internet of Things will open up a slew of new opportunities for MEMS-based sensors, but chipmakers are proceeding cautiously. There are a number of reasons for that restraint. Microelectromechanical systems are difficult to design, manufacture and test, which initially fueled optimism in the MEMS ecosystem that this market would command the same kinds of premiums that analo... » read more

Will 7nm And 5nm Really Happen?


Today’s silicon-based finFETs could run out of steam at 10nm. If or when chipmakers move beyond 10nm, IC vendors will require a new transistor architecture. III-V finFETs, gate-all-around FETs, quantum well finFETs, SOI finFETs and vertical nanowires are just a few of the future transistor candidates at 7nm and 5nm. Technically, it’s possible to manufacture the transistor portions of the... » read more

Capping Tools Tame Electromigration


By Mark LaPedus The shift towards the 28nm node and beyond has put the spotlight back on the interconnect in semiconductor manufacturing. In chip scaling, the big problem in the interconnect is resistance-capacitance (RC). Another, and sometimes forgotten, issue is electromigration. “Electromigration gets worse in device scaling,” said Daniel Edelstein, an IBM Fellow and manager of BE... » read more

Challenges Mount For Interconnect


By Mark LaPedus There are a plethora of chip-manufacturing challenges for the 20nm node and beyond. When asked what are the top challenges facing leading-edge chip makers today, Gary Patton, vice president of the Semiconductor Research and Development Center at IBM, said it boils down to two major hurdles: lithography and the interconnect. The problems with lithography are well documented.... » read more