tag: power devices

Using Picosecond Ultrasonics To Measure Trench Structures In SiC Power Devices
By Nick Keller - 12 Mar, 2024 - Comments: 0

The road to the future is not always a smooth, trouble-free drive. Along the way, there may be unforeseen detours, potholes and accidents, each one capable of setting progress back. But for those behind the wheel, those obstacles are just a part of the journey. Such is the case for the automotive industry as it continues to steer away from gas-powered vehicles and turn toward hybrid and elec... » read more

What’s Next For Power Electronics? Beyond Silicon
By Emily Yan - 29 Feb, 2024 - Comments: 0

For more than half a century, silicon has been the bedrock of power electronics. Yet as silicon meets its physical limitations in higher-power, higher-temperature applications, the industry’s relentless pursuit of more efficient power systems has ushered in the wide bandgap (WBG) semiconductors era. The global WBG semiconductors market reached $1.6 billion in 2022, with an estimated CAGR of ... » read more

Using OCD To Measure Trench Structures In SiC Power Devices
By Nick Keller - 08 Feb, 2024 - Comments: 0

You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet days of electric vehicles. The signs of this transition are right there on the streets in the form of electric-powered buses, bikes and cars. The road to our electric future is before us, but we w... » read more

Why Is The Power Device Market So Hot Right Now?
By Dermott Lynch - 25 Jan, 2024 - Comments: 0

Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using FTIR To Improve SiC Power Device Performance
By Nick Keller - 09 Jan, 2024 - Comments: 0

The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Addressing Trench Structures And Larger Wafers For Power Devices
By Vamsi Velidandla - 07 Nov, 2023 - Comments: 0

Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Optimizing Metal Film Measurement On IGBT And MOSFET Power Devices With Picosecond Ultrasonic Technology
By Johnny Dai - 10 Oct, 2023 - Comments: 0

By Johnny Dai with Cheolkyu Kim and Priya Mukundhan In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power semiconductor devices will be insulated gate bipolar transistor (IGBT) and power metal oxide semiconductor field effect transistor (power MOSFET) ... » read more

How To Answer Five Common Questions About Power Module Current Density
By Wilfried Wessel - 08 Jun, 2023 - Comments: 0

Power module current density is an important factor in determining the efficiency and performance of power modules. This article answers five common questions about power module current density so you can make informed decisions when designing a power module for your application. 1. How many wire bonds are required? Generally, a higher current density requires an increased number of w... » read more

Testing High Power Discrete Devices
By Tom Tran - 06 Jun, 2023 - Comments: 0

Emerging markets are driving the evolution of discrete power devices. Increased power requirements mean more power is being driven through a smaller device, creating challenges in both device design and test. This video series, 3 for 3, provides 3 answers for 3 pressing questions about trends in semiconductor test, and how testing for high power discrete devices is evolving. » read more

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor
By Technical Paper Link - 05 May, 2023 - Comments: 0

A technical paper titled "Gate Drive Circuit Suitable for a GaN Gate Injection Transistor" was published by researchers at Nagoya University. Abstract "A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the lite... » read more

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