L-FinFET Neuron For A Highly Scalable Capacitive Neural Network (KAIST)


A new technical paper titled "An Artificial Neuron with a Leaky Fin-Shaped Field-Effect Transistor for a Highly Scalable Capacitive Neural Network" was published by researchers at KAIST (Korea Advanced Institute of Science and Technology). “In commercialized flash memory, tunnelling oxide prevents the trapped charges from escaping for better memory ability. In our proposed FinFET neuron, t... » read more

The Week In Review: Manufacturing


Chipmakers Christopher Rolland, an analyst at Susquehanna International, expects to see more merger and acquisition activity in the IC industry heading into 2018. “M&A activity slowed in 2017, but the year is going out with a bang!” Rolland said in a recent research note. Towards the end of 2017, for example, Broadcom made a bid for Qualcomm, while Marvell announced intent to buy Cavium. ... » read more

Drill Down: Embedded NVM Technology


Many of the next-generation devices that will be seen on the IoT/E will have power, footprint, and electronic constraints as never before. Electronic flash memories (eFLASH), and their derivatives are seen as a realistic solution to many of these design constraints for small form factor and simple IoE devices. “NVM will be very important for the IoE from the perspective of saving power," ... » read more