MRAM Begins To Attract Attention

By Mark LaPedus In the 1980s, there were two separate innovations that changed the landscape in a pair of related fields—nonvolatile memory and storage. In one effort, Toshiba invented the flash memory, thereby leading to NAND and NOR devices. On another front, physicists discovered the giant magnetoresistance (GMR) effect, a technology that forms the basis of hard disk drives, magnetores... » read more

Universal Memories Fall Back To Earth

By Mark LaPedus Ten years ago, Intel Corp. declared that flash memory would stop scaling at 65nm, prompting the need for a new replacement technology. Thinking the end was near for flash, a number of companies began to develop various next-generation memory types, such as 3D chips, FeRAM, MRAM, phase-change memory (PCM), and ReRAM. Many of these technologies were originally billed as “uni... » read more