Next-Gen Mask Writer Race Begins

Competition is heating up in the mask writer equipment business as two vendors—Intel/IMS and NuFlare—vie for position in the new and emerging multi-beam tool segment. Last year, Intel surprised the industry by acquiring IMS Nanofabrication, a multi-beam e-beam mask writer equipment vendor. Also last year, IMS, now part of Intel, began shipping the world’s first multi-beam mask writer f... » read more

More EUV Mask Gaps

Extreme ultraviolet (EUV) lithography is at a critical juncture. After several delays and glitches, [gettech id="31045" comment="EUV"] is now targeted for 7nm and/or 5nm. But there are still a number of technologies that must come together before EUV is inserted into mass production. And if the pieces don’t fall into place, EUV could slip again. First, the EUV source must generate more ... » read more

7nm Fab Challenges

Leading-edge foundry vendors have made the challenging transition from traditional planar processes into the finFET transistor era. The first [getkc id="185" kc_name="finFETs"] were based on the 22nm node, and now the industry is ramping up 16nm/14nm technologies. Going forward, the question is how far the finFET can be scaled. In fact, 10nm finFETs from Samsung are expected to ramp by ye... » read more

Impact Of Illumination On Model-Based SRAF Placement For Contact Patterning

Sub-Resolution Assist Features (SRAFs) have been used extensively to improve the process latitude for isolated and semi-isolated features in conjunction with off-axis illumination. These SRAFs have typically been inserted based upon rules which assign a global SRAF size and proximity to target shapes. Additional rules govern the relationship of assist features to one another, and for random log... » read more