Power/Performance Bits: March 21


Tiny redox flow batteries for chips Researchers at ETH Zurich and IBM Research Zurich built a tiny redox flow battery capable of both powering and cooling stacks of chips. In a flow battery, an electrochemical reaction is used to produce electricity out of two liquid electrolytes, which are pumped to the battery cell from outside via a closed electrolyte loop. Such batteries are usually u... » read more

Power/Performance Bits: March 14


Magnetic storage on one atom Scientists at IBM Research created a single-atom magnet and were able to store one bit of data on it, making it the world's smallest magnetic storage device. Using electrical current, the researchers showed that two magnetic atoms could be written and read independently even when they were separated by just one nanometer. This tight spacing could, the team hop... » read more

Data Storage Issues Grow For Cars


Adding safety features into cars and making them increasingly autonomous are rapidly creating a big data problem. More sensors produce more data, which has to be processed, moved, and ultimately stored somewhere in those vehicles. Exactly how that will be achieved isn't quite clear yet. However, there is plenty of discussion on that topic—and for good reason. A new 2017 car will genera... » read more

Power/Performance Bits: Jan. 17


Creating magnets with electricity Researchers at the SLAC National Accelerator Laboratory, Korea Advanced Institute of Science and Technology (KAIST), Korea Institute of Materials Science, Pohang University of Science and Technology, Max Planck Institute, and the University of New South Wales drew magnetic squares in a nonmagnetic material with an electrified pen and then "read" this magneti... » read more

Five Pitfalls In PCIe-Based NVMe Controller Verification


Non-Volatile Memory Express (NVMe) is gaining rapidly in mindshare among consumers and vendors. Some industry analysts are forecasting that PCIe-based NVMe will become the dominant storage interface over the next few years. With its high-performance and low-latency characteristics, and its availability for virtually all platforms, NVMe is a game changer. For the first time, storage devices and ... » read more

Changes In China


By Jesse Zhang, SEMI China Industry leaders gathered in Beijing at BIMS 2016 — the Beijing International Microelectronics Symposium — to discuss growth opportunities for the semiconductor industry and the mobile communications market. The 17th session of BIMS was co-sponsored by SEMI and the Chinese-American Semiconductor Professionals Association (CASPA). For 17 years, BIMS has provi... » read more

Power/Performance Bits: July 5


More storage with electromagnetic switch Scientists at Hokkaido University designed a device that employs both magnetic and electronic signals, potentially doubling the storage capacity of conventional memory devices. In addition to the binary 0/1 method of storing information, this would add an A/B store for the information as well. To do this would require finding a material that can switc... » read more

Power/Performance Bits: April 12


Digital storage in DNA Computer scientists and electrical engineers from University of Washington and Microsoft detailed one of the first complete systems to encode, store and retrieve digital data using DNA molecules, which can store information millions of times more compactly than current archival technologies. Progress in DNA storage has been rapid: in 1999, the state-of-the-art in DN... » read more

Are Chips Getting More Reliable?


Reliability is emerging as a key metric in the semiconductor industry, alongside of power, performance and cost, but it also is becoming harder to measure and increasingly difficult to achieve. Most large semiconductor companies look at reliability in connection with consumer devices that last several years before they are replaced, but a big push into automotive, medical and industrial elec... » read more

Power/Performance Bits: Jan. 19


Antiferromagnetic memory Physicists at The University of Nottingham, working in collaboration with researchers in the Czech Republic, Germany, Poland, and Hitachi Europe showed that the magnetic spins of antiferromagnets can be controlled to make a completely different form of digital memory. This was the first demonstration of electrical current control of antiferromagnets, and the first... » read more

← Older posts