Power/Performance Bits: Aug. 9

Phase-change memory Researchers at Stanford are working on phase-change memory technology, which could deliver the best of volatile and non-volatile memory. Phase-change materials can exist in two different atomic structures, each of which has a different electronic state. A crystalline, or ordered, atomic structure, permits the flow of electrons, while an amorphous, or disordered, struct... » read more

Avogy: Vertical GaN Power Devices

Gallium nitride (GaN), a binary III-V bandgap material, has been used to make LEDs for the last several years. GaN has also been touted as the next big thing in power electronics and RF. To some degree, GaN has made inroads in RF, especially in high-end defense and aerospace applications. But the technology is having mixed success in power electronics. Today’s GaN-on-silicon devices are l... » read more