Power/Performance Bits: April 19


Ferroelectric non-volatile memory Scientists from the Moscow Institute of Physics and Technology (MIPT), the University of Nebraska, and the University of Lausanne in Switzerland succeeded in growing ultra-thin (2.5-nanometer) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. The film was g... » read more

System Bits: Jan. 14


Fastest organic transistor Research teams from the University of Nebraska-Lincoln and Stanford University have worked together to produce what they believe are the world’s fastest thin-film organic transistors, proving that this experimental technology has the potential to achieve the performance needed for high-resolution television screens and similar electronic devices. The researchers sa... » read more