Make The Impossible Possible: Use Variable-Shaped Beam Mask Writers And Curvilinear Full-Chip Inverse Lithography Technology For 193i Contacts/Vias With Mask-Wafer Co-Optimization


Abstract: "Full-chip curvilinear inverse lithography technology (ILT) requires mask writers to write full reticle curvilinear mask patterns in a reasonable write time. We jointly study and present the benefits of a full-chip, curvilinear, stitchless ILT with mask-wafer co-optimization (MWCO) for variable-shaped beam (VSB) mask writers and validate its benefits on mask and wafer at Micron Tec... » read more

Business, Technology Challenges Increase For Photomasks


Experts at the Table: Semiconductor Engineering sat down to discuss optical and EUV photomasks issues, as well as the challenges facing the mask business, with Naoya Hayashi, research fellow at DNP; Peter Buck, director of MPC & mask defect management at Siemens Digital Industries Software; Bryan Kasprowicz, senior director of technical strategy at Hoya; and Aki Fujimura, CEO of D2S. What f... » read more

Inspecting, Patterning EUV Masks


Semiconductor Engineering sat down to discuss lithography and photomask trends with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Thomas Scheruebl, director of strategic business development and product strategy at Zeiss; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What fol... » read more

Multi-Beam Mask Writing Finally Comes Of Age


Elmar Platzgummer, chief executive of IMS Nanofabrication, sat down with Semiconductor Engineering to discuss photomask and mask writing trends. IMS, a subsidiary of Intel, is a supplier of multi-beam e-beam systems for photomask production. What follows are excerpts of that conversation. SE: For years, photomask makers have used single-beam e-beam tools to pattern or write the features on ... » read more

Reflections On 2017: Manufacturing And Markets


People love to make predictions, and most of the time they have it easy, but at Semiconductor Engineering, we ask them to look back on the predictions they make each year and to assess how close to the mark they were. To see what they missed and what surprised them. Not everyone accepts our offer to grade themselves, but many have this year. This is the first of two parts that looks at the pred... » read more

1xnm DRAM Challenges


At a recent event, Samsung presented a paper that described how the company plans to extend today’s planar DRAMs down to 20nm and beyond. This is an amazing feat. Until very recently, most engineers believed DRAMs would stop scaling at 20nm or so. Instead, Samsung is ramping up the world’s most advanced DRAMs—a line of 20nm parts—with plans to go even further. Micron and SK Hynix soo... » read more