SoC Power Grid Challenges


The consumption of power and dissipation of heat within large SoCs has received a lot of attention recently, but that is only part of the issue. Power also has to be reliably delivered onto and around the system. This is becoming increasingly difficult, and new nodes are adding to the list of challenges. "If we were building chips where there was only a single Vdd and Vss then it is not that... » read more

Interconnect Challenges Rising


Chipmakers are ramping up their 14nm finFET processes, with 10nm and 7nm slated to ship possibly later this year or next. At 10nm and beyond, IC vendors are determined to scale the two main parts of the [getkc id="185" kc_name="finFET"] structure—the transistor and interconnects. Generally, transistor scaling will remain challenging at advanced nodes. And on top of that, the interconnects ... » read more

IMEC Partner Technical Week Review


In March 2016, Coventor was invited to the biannual Partner Technical Week (PTW) at IMEC in Leuven, Belgium. IMEC, a world-leading research group in nanotechnology, organizes their Partner Technical Week every six months to present scientific results to their partners. During this week, a number of specialists from IMEC's many partner companies also discuss their progress in areas related to IM... » read more

EDA Vendors Prepare For 7nm


It’s not too early to begin looking at design tools for the 7nm, even though the node is not expected to be production-ready until later this decade. While still in the early stages, foundries already in development with leading EDA companies, even though the water remains murky at this point. “7nm right now is in early definition, so we don't know exactly what it will be,” observed... » read more

Challenges In 3D Resists


3D integration straddles the line between CMOS fabs and packaging and assembly houses. Depending on the structure being fabricated, the most appropriate process might be more “CMOS-like” or more “package-like.” For example, in CMOS fabs lithography means spin-on photoresist, exposed by a high precision stepper. Inherent in this approach is an assumption that the wafer surface is flat... » read more