Wafer Scale Transfer of 2D Materials, Graphene


A new technical paper titled "Assessment of Wafer-Level Transfer Techniques of Graphene with Respect to Semiconductor Industry Requirements" was published by researchers at Infineon Technologies AG, RWTH Aachen University, Protemics, and Advantest. Abstract "Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requ... » read more

New Method to Measure, At The Wafer Scale, Direct Bonding Energies (CEA-LETI)


A new technical paper titled "Double cantilever beam bonding energy measurement using confocal IR microscopy" was published by researchers at Univ. Grenoble Alpes, CEA-LETI and SOITEC, Parc Technologique des Fontaines. "A new technique is assessed in order to measure, at the wafer scale, direct bonding energies. It is derived from the standard Double Cantilever Beam (DCB) method and uses int... » read more

Wafer Scale Tool To Transfer Graphene


A new technical paper titled "Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements" was published by researchers at RWTH Aachen University, AMO GmbH, Infineon Technologies, Protemics GmbH, and Advantest Europe. Abstract (partial): "Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based elect... » read more

Cu/SiO₂ Hybrid Bond Interconnects


Technical paper titled "Microstructure Development of Cu/SiO₂ Hybrid Bond Interconnects After Reliability Tests" from researchers at TU Dresden and others. Abstract: "The focus of this study is a detailed characterization of hybrid Cu/SiO 2 wafer-to-wafer bonding interconnects after reliability testing. Hybrid bonding (or direct bond interconnect) is a technology of choice for fine pitch... » read more

New Trends In Wafer Bonding


Unable to scale horizontally, due to a combination of lithography delays and power constraints, manufacturers are stacking devices vertically. This has become essential as the proliferation of mobile devices drives demand for smaller circuit footprints, but the transition isn't always straightforward. Three-dimensional integration schemes take many forms, depending on the required interconne... » read more

The Trouble With MEMS


The advent of the Internet of Things will open up a slew of new opportunities for MEMS-based sensors, but chipmakers are proceeding cautiously. There are a number of reasons for that restraint. Microelectromechanical systems are difficult to design, manufacture and test, which initially fueled optimism in the MEMS ecosystem that this market would command the same kinds of premiums that analo... » read more

Next Channel Materials?


Chipmakers are making a giant leap from planar transistors to [getkc id="185" kc_name="finFETs"]. Initially, [getentity id="22846" e_name="Intel"] moved into finFET production at 22nm and is now ramping up its second-generation finFETs at 14nm. And the other foundries will enter the finFET fray at 16nm/14nm. So what’s next? Chipmakers will likely extend the finFET architecture to both 10nm... » read more