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Infineon

This work is aiming for the development and implementation of a soft switching setup for GaN power devices fully based on wafer-level assessment.

Soft switching applications use typically a resonance in the circuit such that the power transistor is being discharged and its energy can be reused in the switching application. Thus, no energy is lost during switching and the power transistor does not see the harsh stress conditions that typically applies during hard switching. The work could explore two schemes of hard switching
– Soft switching by active components i.e. an active transistor turning on in parallel to the DUT
– (optional) resonant soft switching by passive components e.g. LC as energy storage as in typical resonant circuits

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