Job Description
Wolfspeed (Cree’s Power & RF division) is one of the world’s leading suppliers of gallium nitride (GaN) wafers and devices for RF communications, radar and electronic warfare. Our business is growing rapidly and is in need of a RF/Microwave Power Amplifier Design Engineer for our RF product development team. The primary focus of this role is the design, test and evaluation of cutting edge products using GaN HEMT technology.

What can Wolfspeed do for you?

At Wolfspeed, you will:

Design GaN high power transistors and amplifiers.
Continue the acceleration of GaN adoption across the wireless frequency spectrum.
Own products from cradle to handoff (as opposed to more niche “production design centers” where designers only focus on one specific piece of an overall design.) You will learn MORE here.
Experience both depth and breadth – high power, high frequency, high efficiency, linearity, quick turn, test, characterization, production.
Understand how what you do contributes to the bottom line of the organization.
Work for a small team (you will not be a “number” here!), but nor is this a startup. This is a world class, winning organization with a nimble footprint.

What can you do for Wolfspeed?

Design of discrete, hybrid, and MMIC based packaged transistors and 50-ohm in/out high power amplifiers.
Creation of custom electrical models of passive package parasitics and matching components such as alumina substrates, bondwire arrays, and high dielectric matching capacitors using industry standard 2.5D MoM and 3D FEM simulators.
Device testing and characterization including s-parameter, large signal, load-pull, stability over temperature and VSWR, as well as market specific measurements on a per-product basis such as modulated signal measurements.
Multistage circuit design and layouts based on existing designs

For more details, hit “Apply for job”