Job Description

In this position within Wolfspeed’s Power Device R&D department, you will be leading device design projects for next-generation silicon carbide SiC power MOSFETs, JBS diodes and high voltage IGBTs. You will be participating in all aspects of silicon carbide power device development, with an emphasis on device design and modeling efforts. You will interact with key customers as well as colleagues from Process Development, Test and Validation, and New Product Introduction to master understanding of the full product life cycle of the new technologies.


Responsibilities include:

Lead development efforts in next generation Silicon Carbide power devices.
Lead design efforts in Silicon Carbide power devices using FEM based simulators.
Develop and specify appropriate structures, characterize and extract parameters from fabricated devices, and feedback for improved device modeling.
Interact with power electronics applications group and fabrication process development group and produce device designs with optimal characteristics.
Analyze characteristics of current products and provide better physical understanding
Prepare technical presentations and papers for internal meetings, as well as conferences and journals.

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