tag: gate-all-around FETs

The Future Of Transistors And IC Architectures
By Mark LaPedus - 18 Mar, 2021 - Comments: 1

Semiconductor Engineering sat down to discuss chip scaling, transistors, new architectures, and packaging with Jerry Chen, head of global business development for manufacturing & industrials at Nvidia; David Fried, vice president of computational products at Lam Research; Mark Shirey, vice president of marketing and applications at KLA; and Aki Fujimura, CEO of D2S. What follows are excerpt... » read more

Breaking The 2nm Barrier
By Mark LaPedus - 18 Feb, 2021 - Comments: 4

Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

New Transistor Structures At 3nm/2nm
By Mark LaPedus - 25 Jan, 2021 - Comments: 12

Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect trans... » read more

FinFETs Give Way To Gate-All-Around
By Lam Research - 18 Nov, 2020 - Comments: 0

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as... » read more

Challenges At 3/2nm
By Ed Sperling - 15 Sep, 2020 - Comments: 0

David Fried, vice president of computational products at Lam Research, talks about issues at upcoming process nodes, the move to EUV lithography and nanosheet transistors, and how process variation can affect yield and device performance. » read more

Metrology Challenges For Gate-All-Around
By Mark LaPedus - 16 Apr, 2020 - Comments: 3

Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

EDA In The Cloud
By Ed Sperling - 18 Feb, 2020 - Comments: 0

Michael White, director of product marketing for Calibre physical verification at Mentor, a Siemens Business, looks at the growing compute requirements at 7, 5 and 3nm, why the cloud looks increasingly attractive from a security and capacity standpoint, and how the cloud as well as new lithography will affect the cost and complexity of developing new chips. » read more

Analog Simulation At 7/5/3nm
By Ed Sperling - 27 Jan, 2020 - Comments: 0

Hany Elhak, group director of product management at Cadence, talks with Semiconductor Engineering about analog circuit simulation at advanced nodes, why process variation is an increasing problem, the impact of parasitics and finFET stacking, and what happens when gate-all-around FETs are added into the chip. » read more

Advanced Process Control
By Ed Sperling - 20 Jun, 2019 - Comments: 0

David Fried, vice president of computational products at Lam Research, looks at shrinking tolerances at advanced processes, how that affects variation in semiconductor manufacturing, and what can be done to achieve the benefits of scaling without moving to new transistor architectures. » read more

IP Requires System Context At 6/5/3nm
By Ann Mutschler - 01 May, 2019 - Comments: 0

Driven by each successive generation of semiconductor manufacturing technology, complexity has reached dizzying levels. Every part of the design, verification and manufacturing is more complicated and intense the more transistors are able to be packed onto a die. For these reasons, the entire system must be taken into consideration as a whole – not just as individual building blocks as could ... » read more

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