tag: through-silicon vias

New Trends In Wafer Bonding
By Katherine Derbyshire - 21 Nov, 2019 - Comments: 0

Unable to scale horizontally, due to a combination of lithography delays and power constraints, manufacturers are stacking devices vertically. This has become essential as the proliferation of mobile devices drives demand for smaller circuit footprints, but the transition isn't always straightforward. Three-dimensional integration schemes take many forms, depending on the required interconne... » read more

Planning For Panel-Level Fan-out
By Mark LaPedus - 21 Nov, 2019 - Comments: 0

Several companies are developing or ramping up panel-level fan-out packaging as a way to reduce the cost of advanced packaging. Wafer-level fan-out is one of several advanced packaging types where a package can incorporate dies, MEMS and passives in an IC package. This approach has been in production for years, and is produced in a round wafer format in 200mm or 300mm wafer sizes. Fan-out... » read more

What’s The Best Advanced Packaging Option?
By Mark LaPedus - 17 Oct, 2019 - Comments: 2

As traditional chip designs become more unwieldy and expensive at each node, many IC vendors are exploring or pursuing alternative approaches using advanced packaging. The problem is there are too many advanced packaging options on the table already, and the list continues to grow. Moreover, each option has several tradeoffs and challenges, and all of them are still relatively expensive. ... » read more

Pushing Memory Harder
By Brian Bailey - 14 Oct, 2019 - Comments: 4

In an optimized system, no component is waiting for another component while there is useful work to be done. Unfortunately, this is not the case with the processor/memory interface. Put simply, memory cannot keep up. Accessing memory is slow, and it can consume a significant fraction of the power budget. And the general consensus is this problem is not going away anytime soon, despite effort... » read more

The Race To Next-Gen 2.5D/3D Packages
By Mark LaPedus - 23 Sep, 2019 - Comments: 4

Several companies are racing each other to develop a new class of 2.5D and 3D packages based on various next-generation interconnect technologies. Intel, TSMC and others are exploring or developing future packages based on one emerging interconnect scheme, called copper-to-copper hybrid bonding. This technology provides a way to stack advanced dies using copper connections at the chip level,... » read more

3D Power Delivery
By Brian Bailey - 12 Sep, 2019 - Comments: 1

Getting power into and around a chip is becoming a lot more difficult due to increasing power density, but 2.5D and 3D integration are pushing those problems to whole new levels. The problems may even be worse with new packaging approaches, such as chiplets, because they constrain how problems can be analyzed and solved. Add to that list issues around new fabrication technologies and an emph... » read more

DRAM Tradeoffs: Speed Vs. Energy
By Ed Sperling - 31 Jul, 2019 - Comments: 1

Semiconductor Engineering sat down to talk about new DRAM options and considerations with Frank Ferro, senior director of product management at Rambus; Marc Greenberg, group director for product marketing at Cadence; Graham Allan, senior product marketing manager for DDR PHYs at Synopsys; and Tien Shiah, senior manager for memory marketing at Samsung Electronics. What follows are excerpts of th... » read more

What’s Next In Advanced Packaging
By Mark LaPedus - 20 Jun, 2019 - Comments: 3

Packaging houses are readying the next wave of advanced IC packages, hoping to gain a bigger foothold in the race to develop next-generation chip designs. At a recent event, ASE, Leti/STMicroelectronics, TSMC and others described some of their new and advanced IC packaging technologies, which involve various product categories, such as 2.5D, 3D and fan-out. Some new packaging technologies ar... » read more

Partitioning In 3D
By Katherine Derbyshire - 23 May, 2019 - Comments: 2

The best way to improve transistor density isn't necessarily to cram more of them onto a single die. Moore’s Law in its original form stated that device density doubles about every two years while cost remains constant. It relied on the observation that the cost of a processed silicon wafer remained constant regardless of the number of devices printed on it, which in turn depended on litho... » read more

3D NAND Race Faces Huge Tech And Cost Challenges
By Mark LaPedus - 23 May, 2019 - Comments: 8

Amid the ongoing memory downturn, 3D NAND suppliers continue to race each other to the next technology generations with several challenges and a possible shakeout ahead. Micron, Samsung, SK Hynix and the Toshiba-Western Digital duo are developing 3D NAND products at the next nodes on the roadmap, but the status of two others, Intel and China’s Yangtze Memory Technologies Co. (YMTC), is les... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy