Founded in 1991, MoSys develops, licenses and markets memory technologies for semiconductors. MoSys claims that their patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys’ licensees have shipped more than 65 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications.
Feb 26th 2015 – Announced that it intends to offer shares of its common stock ion the Nasdaq exchange under the ticker MOSY
