By Fernando García Redondo, Pranay Prabhat, and Mudit Bhargava
Since its discovery in 1975, Tunnel-Magneto-Resistance (TMR) has been actively investigated. From the 2000s, advances in process technologies have made the miniaturization of Magnetic Random Access Memories (MRAMs) based on TMR devices possible, together with integration into traditional CMOS processes.
Introducing magneti...
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