5nm Design Progress


Activity surrounding the 5nm manufacturing process node is quickly ramping, creating a better picture of the myriad and increasingly complex design issues that must be overcome. Progress at each new node after 28nm has required an increasingly tight partnership between the foundries, which are developing new processes and rule decks, along with EDA and IP vendors, which are adding tools, met... » read more

Defect Reduction At 7/5nm


Darin Collins, director of metrology at Brewer Science, talks about the cause of defects at advanced nodes and how material purity increasingly plays a role in overall quality and yield. » read more

7nm Design Challenges


Ty Garibay, CTO at ArterisIP, talks about the challenges of moving to 7nm, who’s likely to head there, how long it will take to develop chips at that node, and why it will be so expensive. This also raises questions about whether chips will begin to disaggregate at 7nm and 5nm. https://youtu.be/ZqCAbH678GE » read more

What’s Next In R&D?


Luc Van den hove, president and chief executive of Imec, sat down with Semiconductor Engineering to discuss R&D challenges and what’s next in the arena. The Belgium R&D organization is working on AI, DNA storage, EUV, semiconductors and other technologies. What follows are excerpts of that conversation. SE: Moore’s Law is slowing down. And it is becoming more expensive to move fr... » read more

Big Trouble At 3nm


As chipmakers begin to ramp up 10nm/7nm technologies in the market, vendors are also gearing up for the development of a next-generation transistor type at 3nm. Some have announced specific plans at 3nm, but the transition to this node is expected to be a long and bumpy one, filled with a slew of technical and cost challenges. For example, the design cost for a 3nm chip could exceed an eye-p... » read more

What’s In A Node?


In an environment where process nodes are no longer consistently delivering the level of improvements predicted by Moore’s Law, the industry will continue to develop “inter-nodes” as a way to deliver incremental improvements in lieu of “full-nodes.” A shift in market requirements, in part due to the rise of AI and IoT, is increasing emphasis on trailing-nodes. When it comes to leading... » read more

What’s Missing In EUV?


Extreme ultraviolet (EUV) lithography is expected to move into production at 7nm and/or 5nm, but as previously reported, there are some gaps in the arena. At one time, the power source was the big problem, but that appears to be solved in the near term. Now, a phenomenon called stochastic effects, or random variations, are the biggest challenge for EUV lithography. But at most events, th... » read more

FinFET Metrology Challenges Grow


Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

Chipmakers Look Beyond Scaling


Gary Patton, CTO of GlobalFoundries, sat down with Semiconductor Engineering to discuss the rollout of EUV, the rising cost of designing chips at the most advanced nodes, and the growing popularity of 22nm planar FD-SOI in a number of markets. What follows are excerpts of that conversation. SE: You've just begun deploying EUV. Are you experiencing any issues? Patton: It's a very complicat... » read more

More Lithography/Mask Challenges


Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

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