tag: EUV

Legacy Process Nodes Going Strong
By Bryon Moyer - 23 Jul, 2024 - Comments: 0

While all eyes tend to focus on the leading-edge silicon nodes, many mature nodes continue to enjoy robust manufacturing demand. Successive nodes stopped reducing die cost at around the 20nm node. “In the finFET era of processes, esoteric process requirements necessary to move technology forward with each generation have added significant cost and complexity,” explained Andrew Appleby, p... » read more

European Mask And Lithography Conference 2024 Worth Attending
By Asmus Hetzel - 23 Jul, 2024 - Comments: 0

The European Mask and Lithography Conference (EMLC) 2024 recently was held in Grenoble, France, and had about 190 participants from a wide range of companies and institutions. Being relatively new to the field of lithography (my background is EDA, machine learning, optimization) and not being a fan of gigantic conferences, I thought it would be a good idea to visit this conference. My main p... » read more

Single Vs. Multi-Patterning Advancements For EUV
By Gregory Haley - 20 Jun, 2024 - Comments: 0

As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and technologies. While the basic lithography process hasn’t changed since the founding of the industry — exposing light through a reticle onto a prepared silicon wafer — the techniques and technology ... » read more

A Wrap-Up Of Photomask Japan 2024
By Ingo Bork - 23 May, 2024 - Comments: 0

This year, I had the opportunity to attend the 30th Symposium on Photomask and NGL Mask Technology, also called Photomask Japan 2024 (PMJ), in Yokohama, Japan, from April 16 to 18. This well-regarded symposium brings together engineers from all over the world to share ideas on photomasks, NGL masks and related technologies. It was great being back to an in-person conference after four years ... » read more

The High NA EUV Imperative: How Computational Lithography Solutions Enable Us To Think Smaller
By Gandharv Bhatara - 21 Mar, 2024 - Comments: 0

The future of computing depends on miniaturization, and extreme ultraviolet lithography (EUV) is one key enabler. Until recently, we have relied on low numerical aperture (NA) EUV systems with an aperture of 0.33 to help us reduce the size of integrated circuits (ICs). As with deep ultraviolet (DUV) technology, this has begun to reach its limits. High NA EUV lithography with a 0.55 aperture rep... » read more

Computational Lithography Solutions To Enable High NA EUV
By Synopsys - 21 Feb, 2024 - Comments: 0

This white paper identifies and discusses the computational needs required to support the development, optimization, and implementation of high NA extreme ultraviolet (EUV) lithography. It explores the challenges associated with the increased complexity of high NA systems, proposes potential solutions, and highlights the importance of computational lithography in driving the success of advanced... » read more

Survey: 2023 eBeam Initiative Luminaries Survey Results
By eBeam Initiative - 18 Oct, 2023 - Comments: 0

Luminaries are confident in high-NA EUV and curvilinear masks 12th Annual Luminaries Survey — July 2023 • Luminaries remain confident in broad High-NA EUV adoption by 2028 • Confidence doubled in leading-edge mask shops handling curvilinear mask demand • Curvilinear masks aren’t just for EUV • Luminaries are more confident about 2023 mask revenues than SEMI Click here to rea... » read more

Directed Self-Assembly Finds Its Footing
By Gregory Haley - 17 Aug, 2023 - Comments: 0

Ten years ago, when the industry was struggling to deliver EUV lithography, directed self-assembly (DSA) roared to the forefront of research and development for virtually every manufacturer determined to extend the limits of 193i. It was the hot topic at of the 2012 SPIE Advanced Lithography Conference, with one attendee from Applied Materials comparing its potential to disrupt the industry to ... » read more

Novel Assist Layers To Enhance EUV Lithography Performance Of Photoresists On Different Substrates
By Brewer Science - 16 Aug, 2023 - Comments: 0

In EUV lithography, good resist patterning requires an assist layer beneath it to provide adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In addition, future EUV high numerical aperture (NA) is expected to require a decrease in thickness from the overall patterning stack. In this study, we are exploring a fundamentally new approach to developing an alt... » read more

High-NA Lithography Starting To Take Shape
By Gregory Haley - 25 Jul, 2023 - Comments: 3

The future of semiconductor technology is often viewed through the lenses of photolithography equipment, which continues to offer better resolution for future process nodes despite an almost perpetual barrage of highly challenging technological issues. For years, lithography was viewed as the primary manufacturing-related gating factor to continued device scaling, beset by multiple delays th... » read more

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