中文 English

Author's Latest Posts


Ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing


Source: AIP Applied Physics Letters, published 2/4/2021.  Evelyn T. Breyer1,  Halid Mulaosmanovic1,  Thomas Mikolajick1,2, and  Stefan Slesazeck1 1Nanoelectronic Materials Laboratory (NaMLab) gGmbH, 01187 Dresden, Germany 2Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany   Technical paper link is here » read more

Final Report: National Security Commission on AI


  In August 2018, Section 1051 of the John S. McCain National Defense Authorization Act for Fiscal Year 2019 established the National Security Commission on Artificial Intelligence as an independent Commission “to consider the methods and means necessary to advance the development of artificial intelligence, machine learning, and associated technologies to comprehensively address the... » read more

Enabling Efficient and Flexible FPGA Virtualization for Deep Learning in the Cloud


SOURCE: Shulin Zeng, Guohao Dai, Hanbo Sun, Kai Zhong, Guangjun Ge, Kaiyuan Guo, Yu Wang, Huazhong Yang(Tsinghua University, Beijing, China).  Published on arXiv:2003.12101 [cs.DC])   ABSTRACT: "FPGAs have shown great potential in providing low-latency and energy-efficient solutions for deep neural network (DNN) inference applications. Currently, the majority of FPGA-based DNN accel... » read more

The Decadal Plan for Semiconductors


Semiconductor Research Corporation and Semiconductor Industry Association released the full Decadal Plan for Semiconductors: a roadmap, for 2030 and beyond. It’s a report that outlines chip research and funding priorities for the next decade. Find the Report Overview, Abridged Report and the Full Report here. » read more

Learning properties of ordered and disordered materials from multi-fidelity data


Source: Chen, C., Zuo, Y., Ye, W. et al. Learning properties of ordered and disordered materials from multi-fidelity data. Nat Comput Sci 1, 46–53 (2021). https://doi.org/10.1038/s43588-020-00002-x Abstract: "Predicting the properties of a material from the arrangement of its atoms is a fundamental goal in materials science. While machine learning has emerged in recent years as a n... » read more

Improving the Performance Of Deep Neural Networks


Source: North Carolina State University. Authors: Xilai Li, Wei Sun, and Tianfu Wu Abstract: "In state-of-the-art deep neural networks, both feature normalization and feature attention have become ubiquitous. They are usually studied as separate modules, however. In this paper, we propose a light-weight integration between the two schema and present Attentive Normalization (AN). Instead of l... » read more

Versatile Thin‐Film Transistor with Independent Control of Charge Injection and Transport for Mixed Signal and Analog Computation


Source: University Of Surrey: Eva Bestelink Olivier de Sagazan Lea Motte Max Bateson Benedikt Schultes S. Ravi P. Silva Radu A. Researchers at University of Surrey and Université de Rennes developed a new device, called a Multimodal Transistor (MMT), that is immune to parasitic effects. In the MMT, on/off switching is controlled independently from the amount of current passing th... » read more

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots


Researchers at Los Alamos National Laboratory and University of California Irvine used quantum dots to create transistors which can be assembled into functional logic circuits. “Potential applications of the new approach to electronic devices based on non-toxic quantum dots include printable circuits, flexible displays, lab-on-a-chip diagnostics, wearable devices, medical testing, smart im... » read more

IoT Cybersecurity Improvement Act of 2020


The "IoT Cybersecurity Improvement Act of 2020" became a U.S. law on 12/4/2020.   The legislation was passed by unanimous consent by the Senate and the House of Representatives. Congress.Gov states: "This bill requires the National Institute of Standards and Technology (NIST) and the Office of Management and Budget (OMB) to take specified steps to increase cybersecurity for Internet of ... » read more

Pressure-induced Anderson-Mott transition in elemental tellurium


Oliveira, J.F., Fontes, M.B., Moutinho, M. et al. Pressure-induced Anderson-Mott transition in elemental tellurium. Commun Mater 2, 1 (2021). https://doi.org/10.1038/s43246-020-00110-1 Abstract: "Elemental tellurium is a small band-gap semiconductor, which is always p-doped due to the natural occurrence of vacancies. Its chiral non-centrosymmetric structure, characterized by helical chains ... » read more

← Older posts