Tech Talk: 5/3nm Parasitics


Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

Transistor Options Beyond 3nm


Despite a slowdown in chip scaling amid soaring costs, the industry continues to search for a new transistor type 5 to 10 years out—particularly for the 2nm and 1nm nodes. Specifically, the industry is pinpointing and narrowing down the transistor options for the next major nodes after 3nm. Those two nodes, called 2.5nm and 1.5nm, are slated to appear in 2027 and 2030, respectively, accord... » read more

New Thermal Issues Emerge


Thermal monitoring is becoming more critical as gate density continues to increase at each new node and as chips are developed for safety critical markets such as automotive. This may sound counterintuitive because the whole point of device scaling is to increase gate density. But at 10/7 and 7/5nm, static current leakage is becoming a bigger issue, raising questions about how long [getkc id... » read more

Tech Talk: Applying Machine Learning


Norman Chang, chief technologist at ANSYS, talks about real applications of machine learning for mechanical, fluid dynamics and chip-package-system design. https://youtu.be/MqYX0wbwSfE » read more

3D Extraction Necessities For 5nm And Below


For most of my career in product marketing I’ve been focused on Static Timing Analysis (STA). It was, and still is, an area with a diverse set of topics including graph based analysis and path based analysis, on-chip variation modeling, delay calculation, evolving library models, etc. During those years I always understood that  parasitic extraction was a crucial element of STA and more impo... » read more

Nodes Vs. Nodelets


Foundries are flooding the market with new nodes and different process options at existing nodes, spreading confusion and creating a variety of challenges for chipmakers. There are full-node processes, such as 10nm and 7nm, with 5nm and 3nm in R&D. But there also is an increasing number of half-nodes or "node-lets" being introduced, including 12nm, 11nm, 8nm, 6nm and 4nm. Node-lets ar... » read more

The Future Of FinFETs


The number of questions about finFETs is increasing—particularly, how long can they continue to be used before some version of gate-all-around FET is required to replace them. This discussion is confusing in many respects. For one thing, a 7nm finFET for TSMC or Samsung is not the same as a 7nm finFET for Intel or GlobalFoundries. There are a bunch of other nodes being proposed, as well, i... » read more

Understanding Process And Design Systematics


As design rules shrink, semiconductor manufacturing becomes more complex which leads to a huge increase in the defects which could cause a non-yielding die. Process control and inline defect analysis becomes widely relevant to help shorten the learning process from R&D to production. This paper discusses the various methodologies which leverage patterned wafer inspection tools to help analyze d... » read more

E-beam Inspection Makes Inroads


E-beam inspection is gaining traction in critical areas in fab production as it is becoming more difficult to find tiny defects with traditional methods at advanced nodes. Applied Materials, ASML/HMI and others are developing new e-beam inspection tools and/or techniques to solve some of the more difficult defect issues in the fab. [gettech id="31057" t_name="E-beam"] inspection is one of tw... » read more

5G Is Coming


When I returned from the holidays, I thought I had entered a time warp. Did I sleep through January and wake up near the end of February? I expected to see the usual deluge of news about the gadgets and gear that will be featured at the upcoming Consumer Electronics Show (CES 2018). Instead, I’ve seen story after story about next-generation 5G mobile networks—typically the stuff of Mobile W... » read more

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