Author's Latest Posts


Reducing Transistor Capacitance At The 5nm Node Using A Source/Drain Contact Recess


In logic devices such as FinFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One potential way to reduce this parasitic capacitance is to add a source/drain contact (CT) recess step when building the source/drain metal structure. However, this additional structure can potentially increase the source/drain to via resistance. Using... » read more

The Impact Of Metal Gate Recess Profile On Transistor Resistance And Capacitance


In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize the metal gate recess dimensions. However, there are limits to reducing this capacitance if you simply remove more of the metal material, since this can modify capacitance unexpectedly through chan... » read more

Building Predictive And Accurate 3D Process Models


Process engineers and integrators can use virtual process modeling to test alternative process schemes and architectures without relying on wafer-based testing. One important aspect of building an accurate process model is to ensure that the model is calibrated. Having a calibrated model is important, since it provides assurance to the process integrators and engineers that the model will refle... » read more

Challenges And Solutions For Silicon Wafer Bevel Defects During 3D NAND Flash Manufacturing


As semiconductor technology scales down in size, process integration complexity and defects are increasing in 3D NAND flash, partially due to larger stack deposits and thickness variability between the wafer center and the wafer edge. Industry participants are working to reduce defect density at the wafer edge to improve overall wafer yield. Attention has focused on common wafer bevel defects s... » read more